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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SB722 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) *High Power Dissipation: PC= 150W(Max)@TC=25 *High Current Capability APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -160 -160 -5 -15 -4 150 UNIT V .cn mi e V V IC Collector Current-Continuous A IB B Baser Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature A PC W TJ 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB722 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 -160 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain w w scs .i w VEB= -5V; IC= 0 IC= -1A; VCE= -5V .cn mi e 50 -0.1 mA -0.1 mA isc Websitewww.iscsemi.cn |
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